Solid-state image pickup device and camera system

ABSTRACT

A solid-state image pickup device including a pixel section arranged with multiple pixel circuits in matrix having functions for converting an optical signal to an electrical signal and for accumulating the electrical signal depending on an exposure time, and a pixel driving section capable of driving through a control line to reset, accumulate, transfer, and output signal electric charge of the pixel section. The pixel section may have a pixel shared structure arranged with one selection control line, one reset control line, and multiple transfer control lines, including a readout-pixel section and an unread-pixel section in its entirety. The pixel driving section includes a pixel control section where an unread-pixel is normally fixed in a reset state. When reading a readout-pixel in a shared relationship, if its address is selected or a selection signal becomes active, the unread-pixel reset-state is cancelled to turn into an unread state.

RELATED APPLICATION DATA

This application is a continuation of U.S. patent application Ser. No.13/144,529 filed Oct. 3, 2011, which is a national stage filing ofPCT/JP2009/71763 filed Dec. 28, 2009, the entirety of which areincorporated herein by reference to the extent permitted by law. Thepresent application claims the benefit of priority to Japanese PatentApplication No. JP 2009-011231 filed on Jan. 21, 2009 in the JapanPatent Office, the entirety of which is incorporated by reference hereinto the extent permitted by law.

TECHNICAL FIELD

The present invention relates to a solid-state image pickup device and acamera system, which are represented by a CMOS image sensor.

BACKGROUND ART

In recent years, as a solid-state image pickup device (an image sensor)alternative of a CCD, a CMOS (Complimentary Metal Oxide Semiconductor)image sensor attracts attention.

This is because the CMOS image sensor has overcome the following issues.

That is, producing CCD pixels needs a dedicated process, and operatingthe CCD pixels needs a plurality of power sources, further, it needs tocombine a plurality of peripheral ICs to be operated.

On the contrary, the CMOS image sensor has overcome various problems ofsuch CCD in which systems become extremely complex. Therefore, asdescribed above, it attracts attention.

The CMOS image sensor uses the production process same as the one for anordinary CMOS type integrated circuit, and can be operated by a singlepower source, further can have an mixture of an analog circuit and alogic circuit using the CMOS process, in the same chip.

For this reason, the CMOS image sensor has a plurality of greatadvantages, such as decreasing the number of peripheral ICs, or thelike.

Mainstream of an output circuit of the CCD is a single channel (ch)output using a FD amplifier having a floating diffusion layer (FD).

On the contrary, the CMOS image sensor has a FD amplifier for eachpixel, and mainstream of its output is a column-parallel output type forselecting one line from a pixel array, and for reading out in a columndirection at once.

This is because the FD amplifier arranged inside of pixels hardly obtainefficient driving capability, causing necessity of decreasing data rate,and a parallel processing seems to be advantageous.

Such CMOS image sensor has been used as an image pick up device in aimaging apparatus, such as a digital camera, a camcorder, a surveillancecamera, an onboard camera, or the like.

FIG. 1 is a diagram showing an example of an average structure of a CMOSimage sensor that arranges pixels in a two-dimensional array.

A CMOS image sensor 10 in FIG. 1 is configured by a pixel array section11, a vertical scan circuit (Vdec: pixel driving circuit) 12, and acolumn readout circuit (column processing circuit) 13.

The pixel array section 11 arranges a pixel circuit in a matrix of Mrows and N columns.

The vertical scan circuit 12 controls an operation of pixel arranged inan arbitrary row in the pixel array section 11. The vertical scancircuit 12 controls pixels through control lines LRST, LTX, and LSEL.

The readout circuit 13 receives pixel row data controlled reading by thevertical scan circuit 12 through an output signal line LSGN, andtransfers it to a signal processing circuit in the post-stage.

The readout circuit 13 includes a correlated double ampling circuit(CDS: Correlated Double Sampling) or an analog digital converter (ADC).

FIG. 2 is a diagram showing an example of pixel circuit of a CMOS imagesensor configured by four transistors.

This pixel circuit 20 has, for example, a photoelectric conversionelement 21 composed of photo diodes (PD) (hereinafter, referred to assimply PD, in some cases).

The pixel circuit 20 includes, for this one unit of the photoelectricconversion element 21, four transistors of a transfer transistor 22, areset transistor 23, an amplifier transistor 24, and selectiontransistor 25, as active devices.

The photoelectric conversion element 21 photoelectrically convertsincident lights into an amount of electric charge (as here, electronthereof) according to an amount of light thereof.

The transfer transistor 22 is connected between the photoelectricconversion element 21 and a floating diffusion FD hereinafter, referredto simply as FD, in some cases), and is to be given a transfer signal (adriving signal) TX to its gate (a transfer gate) through a transfercontrol line LTX.

Thus, the electron photoelectrically converted by the photoelectricconversion element 21 is transferred to the floating diffusion FD.

The reset transistor 23 is connected between a power supply line LVREFand the floating diffusion FD, and is to be given a reset signal RST toits gate through a reset control LRST.

Thus, the reset transistor 23 resets an electric potential of thefloating diffusion FD to an electric potential of the power supply lineLVDD.

The floating diffusion FD is connected with a gate of the amplifiertransistor 24. The amplifier transistor 24 is connected to a signal line26 (LSGN in FIG. 1) through the selection transistor 25, and constitutesa source follower with a constant current source outside a pixelsection.

And, an address signal (a selection signal) SEL is to be given to thegate of the selection transistor 25 through a selection control lineLSEL, and the selection transistor is turned on.

When the selection transistor 25 is turned on, the amplifier transistor24 amplifiers the electric potential of the floating diffusion FD, andoutputs voltage to the signal line 26. The voltage outputted by eachpixel is to be outputted to the readout circuit 13 via the signal line26.

This reset operation of pixels is to turn on the transfer transistor 22,and to transfer the electric charge accumulated in the photoelectricconversion element 21 to the floating diffusion FD, so as to output theelectric charge accumulated in the floating diffusion FD.

At this time, the floating diffusion FD discards the electric charge toa side of power source by turning on the reset transistor 23 in advanceso as to receive the electric charge of the photoelectric conversionelement 21. Instead, it may discards the electric charge directly to thepower source by turning on the reset transistor 23 in parallel whileturning on the transfer transistor 22, in some cases.

To simplify these series of operation, it is called as “a pixel resetoperation” or “a shutter operation”.

On the other hand, in a readout operation, at first, the resettransistor 23 is turned on to reset the floating diffusion FD, and viathe selection transistor 25 which is turned on in the state, an outputis performed to an output signal line 26. This is called as a P-phaseoutput.

Subsequently, the transfer transistor 22 is turned on to transfer theelectric charge accumulated in the photoelectric conversion element 21to the floating diffusion FD, and its output is output to the signalline 26. This is called as D-phase output.

The difference between the D-phase output and the P-phase output outsideof the pixel circuit to make it as an image signal, cancelling resetnoise of the floating diffusion FD.

To simplify these series of operation, it is called simply as “a pixelreadout operation”.

The transfer control line LTX, the reset control line LRST, and theselection control line LSEL are driven selectively by the vertical scancircuit 12.

As a structure of a pixel circuit, in addition to a four-transistorstructure (4Tr-type) pixel circuit, it is possible to adapt athree-transistor structure (3Tr-type), a five-transistor structure(5Tr-type), or the like.

The above circuits are basic structures having the photoelectricconversion element in each pixel.

In addition, CMOS is also well-known for having a pixel section whichhas a pixel shared structure in which one selection control line, onereset control line, and a plurality of transfer control lines arearranged, and which includes a readout pixel section and an unread pixelsection in the entirety.

One of features of CMOS image sensor having such structure is a functionof random access to the pixel array section.

This realizes high-speed video that increases a frame rate by thinningnecessary pixels to read out, a function for capturing determined regiononly to read out, or the like (for example, refer to Patent Literature1).

FIG. 3 is a conceptual diagram for showing a structure of a CMOS imagesensor which adapted a thinning and reading method, in case of 2 pixelsshared.

This pixel section 11A shares, as shown in FIG. 3, the selection controlline LSEL and the reset control line LRST, and two of the transfercontrol lines LTX1 and LTX2 are wired corresponding to two ofphotoelectric conversion elements, 21-1 (PD1) and 21-2 (PD2).

Before starting reading out, a reset state is set once, and afteremptying the electrical charge left in the photoelectric conversionelements 21-1 and 21-2, next readout operation starts.

However, when reading out after thinning, if unread pixels are left asthey are, there may be a possibility to cause blooming in which theelectrical charge accumulated in the pixels leaks into the surroundingsto be mixed with signals of the readout pixels.

To avoid this mixture of signals, the unread pixels also need to excludethe electrical charge from the pixels.

Various technologies have been provided for preventing occurrence ofthis blooming (for example, refer to Patent Literature 1).

CITATION LIST Patent Literature

Patent Literature 1: JP 2006-310932A

SUMMARY OF INVENTION Technical Problem

In Patent Literature 1, a CMOS image sensor, which is capable ofcapturing partially and reading out pixel information of an arbitraryregion of the pixel array section, does not perform an access control inupper and lower unread rows other than a readout region.

For this reason, it has been pointed out a problem causing so-calledblooming in which the accumulated electric charge is photoelectricallyconverted in the photoelectric conversion element in pixels, and leakedinto the surrounding pixels exceeding an accumulation capacity of thephotoelectric conversion element.

For its solution, it is considered a control method for controllingreset of non-accessed rows other than an arbitrary setting region all atonce, while setting the arbitrary region to readout partially, however,it is difficult to configure its control circuit.

Moreover, it is said that there is some concern that the resetting allat once consumes more energy and increases noise.

In the light of foregoing, as its solution, for the upper and lowernon-accessed rows in the arbitrary partially readout region, it isdisclosed a method for controlling of resetting non-accessed rowssequentially one by one at the same time of reading out an arbitrary rowin the readout region, or the like.

In this case, for preventing blooming, rows not to readout may be fixedto be reset.

If it remains fixed to be reset, however, the transfer control line LTX1is high level “H”.

For this reason, when to set a transfer control line LTX2 to high level“H” and readout the signal of the photoelectric conversion element 21-2,as a dotted line <1> shows in FIG. 3, a diode PD1 can be seenelectrically, which is extremely inconvenient.

The present invention is to provide a solid-state image pickup deviceand a camera system capable of preventing certainly an occurrence ofblooming of unread pixels.

Solution to Problem

A solid-state image pickup device according to the first perspective ofthe present invention includes a pixel section arranged with a pluralityof pixel circuits in matrix having functions for converting an opticalsignal to an electrical signal and for accumulating the electricalsignal depending on an exposure time, and a pixel driving sectioncapable of driving through a control line so as to reset, accumulate,transfer, and output signal electric charge of the pixel section. Thepixel section may have a pixel shared structure which is arranged withone selection control line, one reset control line, and a plurality oftransfer control lines, and which includes a readout pixel section andan unread pixel section in its entirety, and the pixel driving sectionmay include a pixel control section in which an unread pixel is normallyfixed in a reset state, and when reading a readout pixel in a sharedrelationship, if its address is selected or a selection signal becomesactive, the reset state of the unread pixel is cancelled to turn into anunread state.

A camera system according to the second perspective of the presentinvention includes a solid-state image pickup device, an optical systemfor forming an image of a subject on the image pickup device, and asignal processing circuit for processing an output image signal of theimage pickup device. The solid-state image pickup device may include apixel section arranged with a plurality of pixel circuits in matrixhaving functions for converting an optical signal to an electricalsignal and for accumulating the electrical signal depending on anexposure time, and a pixel driving section capable of driving through acontrol line so as to reset, accumulate, transfer, and output signalelectric charge of the pixel section. The pixel section may have a pixelshared structure which is arranged with one selection control line, onereset control line, and a plurality of transfer control lines, and whichincludes a readout pixel section and an unread pixel section in itsentirety, and the pixel driving section includes a pixel control sectionin which the unread pixel is normally fixed in a reset state, and whenreading the readout pixel in a shared relationship, if its address isselected or a selection signal becomes active, the reset state of theunread pixel is cancelled to turn into an unread state.

According to the present invention, in a pixel control section, theunread pixel is normally fixed in a reset state, and when reading thereadout pixel in a shared relationship, if its address is selected or aselection signal becomes active, the reset state of the unread pixel iscancelled to turn into an unread state.

According to the present invention, it is possible to certainly preventthe occurrence of blooming of the unread pixels.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a diagram showing an example of an average structure of a CMOSimage sensor (a solid-state image pickup device) that arranges pixels ina two-dimensional array.

FIG. 2 is a diagram showing an example of pixel of the CMOS image sensorconfigured by four transistors.

FIG. 3 is a conceptual diagram showing a structure of the CMOS imagesensor which adapted a thinning and reading method, in case of 2 pixelsshared.

FIG. 4 is a diagram showing a structure example of the CMOS image sensor(a solid-state image pickup device) according to the embodiment of thepresent invention.

FIG. 5 is a diagram showing an example of pixels of the CMOS imagesensor having a shared structure in two pixels according to theembodiment.

FIG. 6 is a circuit diagram showing a first structure example of a pixelcontrol section of a vertical scan circuit according to the embodimentof the present invention.

FIG. 7 is a diagram for explaining an operation of the pixel controlsection in FIG. 6.

FIG. 8 is a circuit diagram showing a second structure example of apixel control section of a vertical scan circuit according to theembodiment of the present invention.

FIG. 9 is a circuit diagram showing a structure example of a RAM and awrite circuit thereof in FIG. 8.

FIG. 10 is a timing chart for explaining operations of the pixel controlsection in FIG. 8 and FIG. 9.

FIG. 11 is a circuit diagram showing a third structure example of apixel control section of a vertical scan circuit according to theembodiment of the present invention.

FIG. 12 shows circuits and operation functions indicating in groups inMIL logic symbols related to FIG. 11.

FIG. 13 is a diagram showing a timing chart of a circuit in FIG. 11.

FIG. 14 is a diagram showing a structure example of four pixels shared.

FIG. 15 is a diagram showing an example of pixel arrangement in case offour pixels shared.

FIG. 16 is a circuit diagram showing a fourth structure example of apixel control section of a vertical scan circuit according to theembodiment of the present invention.

FIG. 17 shows circuits and operation functions indicating in groups inMIL logic symbols related to FIG. 16.

FIG. 18 is a block diagram showing an example of a solid-state imagepickup device mounted with a column-parallel ADC (a CMOS image sensor)according to the second embodiment of the present invention.

FIG. 19 is a diagram showing a configuration example of a camera systemto which the solid-state image pickup device is applied according to thethird embodiment of the present invention.

REFERENCE SIGNS LIST

-   100 solid-state image pickup device-   110 pixel array section-   110A pixel section-   120 vertical scan circuit-   120A to 120E pixel control section-   130 column readout circuit-   111 photoelectric conversion element-   112-1 to 112-4 transfer transistor-   113 reset transistor-   114 amplifier transistor-   115 selection transistor-   200 solid-state image pickup device-   210 pixel array section-   220 vertical scan circuit-   230 horizontal transfer scan circuit-   240 timing control circuit-   250 ADC group-   260 DAC-   270 amplifier circuit (S/A)-   280 signal processing circuit-   300 camera system-   310 imaging device-   320 drive circuit-   330 lens-   340 signal processing circuit

DESCRIPTION OF EMBODIMENTS

Description will be given in the following order.

1. First Embodiment (Structure Example of Solid-State Image PickupDevice)

2. Second Embodiment (Structure Example of Solid-State Image PickupDevice Mounted with Column-Parallel ADC)

3. Third Embodiment (Structure Example of Camera System)

1. First Embodiment

FIG. 4 is a diagram showing a structure example of the CMOS image sensor(a solid-state image pickup device) according to the first embodiment ofthe present invention.

The CMOS image sensor 100 includes a pixel array section 110, a verticalscan circuit (Vdec) 120 as a pixel driving section, and a column readoutcircuit 130 as a pixel signal readout section.

The pixel array section 110 arranges a plurality of pixels in twodimensional (a matrix).

FIG. 5 is a diagram showing an example of pixels of the CMOS imagesensor having a shared structure in two pixels according to theembodiment.

This pixel section 110A has, for example, photoelectric conversionelements 111-1, 111-2 composed of photo diodes (PD) (hereinafter,referred to as simply PD, in some cases).

And the pixel section 110A has transfer transistors 112-1, 112-2 withrespect to each of photoelectric conversion elements 111-1, 111-2.

And in the pixel section 110A, a reset transistor 113, an amplifiertransistor 114, and a selection transistor 115 are shared in two pixels.

The photoelectric conversion elements 111-1, 11102 photoelectricallyconvert incident lights into an amount of electric charge (as here,electron thereof) according to an amount of light thereof.

The transfer transistors 112-1, 112-2 are connected between thephotoelectric conversion elements 111-1, 111-2 and a floating diffusionFD (hereinafter, referred to simply as FD, in some cases) as an outputnode.

The transfer transistors 112-1, 112-2 are given transfer signals TX1,TX2 which are control signals to gates thereof (transfer gates) viatransfer control lines LTX111, LTX112.

This causes the transfer transistors 112-1, 112-2 transfer the electronphotoelectric converted in the photoelectric conversion element 111 tothe floating diffusion FD.

The reset transistor 113 is connected between a power supply line LVDDand the floating diffusion FD, and is to be given a reset signal RST,which is a control signal, to its gate through a reset control LRST.

Thus, the reset transistor 113 resets an electric potential of thefloating diffusion FD to an electric potential VDD of the power supplyline LVDD.

The floating diffusion FD is connected with a gate of the amplifiertransistor 114. The amplifier transistor 114 is connected to a signalline LSGN through the selection transistor 115, and constitutes a sourcefollower with a constant current source outside a pixel section.

And, a selection signal SEL, which is a control signal in accordancewith an address signal, is to be given to the gate of the selectiontransistor 115 through a selection control line LSEL, and the selectiontransistor turns on.

When the selection transistor 115 is turned on, the amplifier transistor114 amplifiers the electric potential of the floating diffusion FD, andoutputs voltage to the signal line LSGN. The voltage outputted by eachpixel is to be outputted to the column readout circuit 130 via thesignal line LSGN.

These operations are performed for each pixel in one line at once,because each gate of the transfer transistor 112, the reset transistor113, and the selection transistor 115 is connected in a unit of row, forexample.

A reset control line LRST, transfer control lines LTX111, LTX112, andthe selection control line LSEL are wired for each row unit of a pixelarrangement.

These reset control line LRST, the transfer control line LTX, and theselection control line LXEL are to be driven by the vertical scancircuit 120.

Thus, the pixel section 110A includes a pixel shared structure arrangedwith one reset control line LRST, and a plurality of the transfer linesLTX111, LTX112, having a readout pixel section and unread pixel sectionin its entirety.

The vertical scan circuit 120 controls an operation of pixel arranged inan arbitrary row in the pixel array section 110. The vertical scancircuit 120 controls pixels through the reset control line LRST, thetransfer control lines LTX (111,112), and the selection control lineLSEL.

The vertical scan circuit 120 includes, as shown in FIG. 5, a pixelcontrol section 120A.

The pixel control section 120A fixes unread pixels normally in a resetstate, and when reading readout pixels which are in a sharedrelationship, cancels the reset state of the unread pixels to turn intoan unread state if the address is selected or the selection signalbecomes active.

The pixel control section 120A includes a logic circuit that fixesunread pixels in a reset state, and that when reading readout pixelswhich are in a shared relationship, cancels the reset state of theunread pixels to turn into an unread state if the address is selected orthe selection signal becomes active.

The logic circuit includes functions in which a logic gate is repeatedin a cycle same as the cycle of shared pixels, and changes controls ofreadout pixels and unread pixels depending upon a connectionrelationship of the logic gate only.

The pixel control section 120A is connected to the transfer control lineLTX, and the logic gate enabling readout and unread is formed in acombination of a plurality of logic circuits.

The pixel control section 120A is set so that a reset cancellationperiod and unread period of a transfer line of the unread pixels is setby a signal period of the selection control line LSEL, and a readoutperiod of the transfer line of readout pixels are set to be within aperiod of the selection signal SEL of the selection control line LSEL.

The pixel control section 120A cancels the reset state of other pixelsin a shared relationship to set an unread state by the logic gate whenselected the address of the readout pixels.

Further, a combination logic gate is to be arranged on the same chiptogether with the pixel section.

Structure and function of the pixel control section 120A of thisvertical scan circuit 120 will be explained later in detail.

The pixel control section 120A is configured, as shown in FIG. 5, forexample, including a vertical (V) decoder 121, a level shifter 122, alogic circuit 123, and a vertical drive circuit 124.

In the pixel control section 120A, an address is decoded in the Vdecoder 121, the decoded signal receives a level shift effect of thelevel shifter 122 to be supplied to the logic circuit 123 including alogic gate.

The logic circuit 123 is configured so as to fix unread pixels in areset state, and when reading readout pixels which are in a sharedrelationship, to cancel the reset state of the unread pixels to turninto an unread state if the address is selected or the selection signalbecomes active.

Moreover, the vertical drive circuit 124 controls driving the resetcontrol line LRST, the transfer control line LTX, and the selectioncontrol line LSEL depending on an operation state, following results oflogical operation of the logic circuit 123.

The column readout circuit 130 receives data of pixel row in which aread operation is controlled by the vertical scan circuit 120 through anoutput signal line LSGN, and transfers it to a signal processing circuitin the post-stage.

The column read circuit 130 includes a CDS circuit or an ADC(analog-digital converter).

Hereinafter, a specific structure and functions of the pixel controlsection of the vertical scan circuit 120 according to the presentembodiment will be described.

[First Structure Example of Pixel Control Section]

FIG. 6 is a circuit diagram showing a first structure example of a pixelcontrol section of a vertical scan circuit according to the embodimentof the present invention.

The pixel control section 120B in FIG. 6 includes D-type flipflop DFF1to DFF4 as a plurality of latches, 3-input AND gates AD1 to AD4 as thefirst logic gates, and OR gates OG1 to OG4 as the second logic gates.

And the first logic gate and the second logic gate generate a logic gatesection.

According to a thinning address determined by a required specificationof a movie mode such as a frame rate, a thinning handling circuit whichis fixed in hardwired (a blooming suppressor circuit) is generallyconfigured for each address row.

By comparison, the pixel control section 120B in FIG. 6 is configured tohandle an arbitrary thinning address and to be capable of changing inreal time, by making address rows for thinning operation programmableusing a DFF chain that is a latch chain section.

Write clock φ is supplied to clock terminals of DFF1 to DFF4. Data DT issupplied to a data input D of DFF 1, and output Q of DFF1 is connectedto data input D of DFF(5) not shown in next stage.

Similarly, output Q of DFF2 is connected to data input D of DFF3 in thenext stage, output Q is connected to data input D of DFF4 in the nextstage, and output Q of DFF4 is connected to data input D of DFF(5) notshown in the next stage.

Thinned signal SIG[m] is supplied to the first input of AND gates AD1 toAD4. The second input of AND gates AD1 to AD4 are a negative input.

The second input of AND gates AD1 and AD2 are connected to a selectioncontrol line LSEL[n] that is a supplier line of the selection signalSEL[n].

The second input of AND gates AD3 and AD4 are connected to a selectioncontrol line LSEL[n+1] that is a supplier line of the selection signalSEL[n+1]

The third input of AND gate AD1 is connected to output terminal Q offlip-flop .DFF1. The third input of AND gate AD2 is connected to outputterminal Q of flip-flop .DFF2. The third input of AND gate AD3 isconnected to output terminal Q of flip-flop .DFF3. The third input ofAND gate AD4 is connected to output terminal Q of flip-flop .DFF4.

The first input of OR gate OG1 is connected to output of AND gate AD1,and the second input is connected to a transfer control line LTX[2n]that is a supplier line of a transfer signal TX[n].

The first input of OR gate OG2 is connected to output of AND gate AD2,and the second input is connected to a transfer control line LTX[2n+1]that is a supplier line of a transfer signal TX[2n+1].

The first input of OR gate OG3 is connected to output of AND gate AD3,and the second input is connected to a transfer control line LTX[2n+2]that is a supplier line of a transfer signal TX[2n+2].

The first input of OR gate OG4 is connected to output of AND gate AD4,and the second input is connected to a transfer control line LTX[2n+3]that is a supplier line of a transfer signal TX[2n+3].

FIGS. 7(A) and (B) are diagrams for explaining an operation of the pixelcontrol section 120B in FIG. 6, and FIG. 7(A) is a diagram forexplaining an operation in normal time, and FIG. 7(B) is for anoperation when writing.

As shown in FIG. 7(A), whether a pixel is to read or unread isdetermined by a value (0 or 1) stored in any of DFF1 to DFF4.

This enables an arbitrary row to be switched into an operation to reador unread.

Flip-flops DFF1 to DFF4 have a chain structure, and are capable ofoperating in accordance with an arbitrary thinning address by flowing a01 series for determining serially to read or unread in advance into theDFF chain.

As shown in FIG. 7(A), in normal operation, the write clock φ is stopped(fixed to a low level) and the flip-flops DFF1 to DFF4 output storedvalues from output terminal Q.

In this case, since the write clock φ is stopped, a memory value offlip-flop DFF in the next stage will not be propagated.

As shown in FIG. 7(A), in writing operation, a thinning signal SIG “m”is fixed to a low level, and the 01 series to read or unread inaccordance with a thinning specification is transferred sequentially toDFF1 to DFF4.

Subsequently, in order to store one of series to a flip-flop DFF, anamount of time for the number of clock in V size is required. The writeclock φ is controlled by a counter.

According to the pixel control section 120B in FIG. 6, it is possible tochange into an arbitrary thinning mode, even in real-time, withoutchanging hardware.

Further, a kind of thinning mode is possible to be extended unlimitedlyin principle without changing a hardware depending upon series to bestored by DFF chain.

Taking advantage of a real time feature, it is possible to change athinning operation finely for various operations in a setting side.

Determine a requirement specification is turned to be not necessaryanymore primarily, and a level in which freedom in designing can beallowed would be advanced from hardware to software.

As the level allowing the freedom in designing advanced, a degree offreedom in determining specification is extended.

[Second Structure Example of Pixel Control Section]

FIG. 8 is a circuit diagram showing the second structure example of apixel control section of a vertical scan circuit according to theembodiment of the present invention.

A pixel control section 120C in FIG. 8 includes RAM 121 to 124 as aplurality of memories, 3-input AND gates AD11 to AD14 and 2-input ANDgates AD21 to AD24 as the first logic gates, and OR gates OG11 to OG14as the second logic gates.

And the first logic gate and the second logic gate generate a logic gatesection.

As described above, according to a thinning address determined by arequired specification of a movie mode such as a frame rate, a thinninghandling circuit which is fixed in hardwired (a blooming suppressorcircuit) is generally configured for each address row.

By comparison, the pixel control section 120C in FIG. 8 is configured tohandle an arbitrary thinning address and to be capable of changing inreal time, by causing RAM121 to 124 to store address rows for thinningoperation to be made programmable.

The pixel control section 120C determines whether a pixel is to read orunread by a value (0 or 1) stored in any of DFF1 to DFF4.

This enables the pixel control section 120C to make an arbitrary row tobe switched into an operation to read or unread.

RAM 121 to 124 includes a connection section W with a word line WL, aconnection section B with a bit line BL, a connection section /B with aninversion bit line /BL (/ indicates an inverse), and an output terminalQ.

The first input of AND gates AD21 to AD24 is connected to a supplierline of a write enable signal WRT_EN.

The second input of AND gate AD21 is connected to a transfer controlline LTX[2n] that is a supplier line of the transfer signal TX[2n], andan output of AND gate AD21 is connected to a word line WL11. The wordline WLL11 is connected to a connection section W of RAM 121.

The word line WL11 is driven in high level when the transfer signalTX[2n] is in high level and the write enable signal WRT_EN is active inhigh level.

The second input of AND gate AD22 is connected to a transfer controlline LTX[2n+1] that is a supplier line of the transfer signal TX[2n+1],and an output of AND gate AD22 is connected to the word line WL12. Theword line WLL12 is connected to a connection section W of RAM 122.

The word line WL12 is driven in high level when the transfer signalTX[2n+1] is in high level and the write enable signal WRT_EN is activein high level.

The second input of AND gate AD23 is connected to a transfer controlline LTX[2n+2] that is a supplier line of the transfer signal TX[2n+2],and an output of AND gate AD23 is connected to the word line WL13. Theword line WLL13 is connected to a connection section W of RAM 123.

The word line WL13 is driven in high level when the transfer signalTX[2n+2] is in high level and the write enable signal WRT_EN is activein high level.

The second input of AND gate AD24 is connected to a transfer controlline LTX[2n+3] that is a supplier line of the transfer signal TX[2n+3],and an output of AND gate AD24 is connected to the word line WL14. Theword line WLL114 is connected to a connection section W of RAM 124.

The word line WL14 is driven in high level when the transfer signalTX[2n+3] is in high level and the write enable signal WRT_EN is activein high level.

Thus, in the pixel control section 120C, the word lines WL11 to WL14when to access to RAM 121 to 124 is configured so that transfer controlline LTX[2n] to LTX[2n+3] can be utilized as they are when to readout apixel.

That is, the pixel control section 120C is configured to take AND withthe write enable signal WRT_EN so that it becomes effective to writeinto RAM 121 to 124 when transfer signals TX[2n] to TX[2n+3] is activein high level.

Thinned signal SIG[m] is supplied to the first input of AND gates AD11to AD14. The second input of AND gates AD11 to AD14 is a negative input.

The second input of AND gates AD11 and AD12 are connected to a selectioncontrol line LSEL[n] that is a supplier line of the selection signalSEL[n]. The second input of AND gates AD13 and AD14 are connected to aselection control line LSEL[n+1] that is a supplier line of theselection signal SEL [n+1].

The third input of AND gate AD11 is connected to output terminal Q ofRAM121. The third input of AND gate AD12 is connected to output terminalQ of RAM122. The third input of AND gate AD13 is connected to outputterminal Q of RAM123. The third input of AND gate AD14 is connected tooutput terminal Q of RAM124.

The first input of OR gate OG11 is connected to output of AND gate AD11,and the second input is connected to a transfer control line LTX[2n]that is a supplier line of a transfer signal TX[n].

The first input of OR gate OG12 is connected to output of AND gate AD12,and the second input is connected to a transfer control line LTX[2n+1]that is a supplier line of a transfer signal TX[2n+1].

The first input of OR gate OG13 is connected to output of AND gate AD13,and the second input is connected to a transfer control line LTX[2n+2]that is a supplier line of a transfer signal TX[2n+2].

The first input of OR gate OG14 is connected to output of AND gate AD14,and the second input is connected to a transfer control line LTX[2n+3]that is a supplier line of a transfer signal TX[2n+3].

Here, a structure example of RAM and its write circuit will beexplained.

FIG. 9 is a circuit diagram showing the structure example of RAM and thewrite circuit thereof.

[Structure Example of RAM]

RAM(121 to 124) are, for example, configured by a static RAM (SRAM).

RAM in FIG. 9 includes inverters IV121, IV122, access transistors M121,M122, nodes ND121, ND122, connection sections W, B, and /B, and anoutput terminal Q.

An output of the inverter IV121 and an input of the inverter IV122 areconnected, and its connecting point forms the node ND121. An output ofthe inverter IV122 and an input of the inverter IV121 are connected, andits connecting point forms the node ND122.

This node ND 122 is connected to the output terminal Q.

The access transistors M121, M122 are, for example, formed by n-channelMOS (NMOS) transistors.

Source and drain of the access transistor M121 are connected to the nodeND 121 and an inverse bit line /BL. A connection point of the accesstransistor M121 and an inverse bit line /BL forms a connection section./B.

Source and drain of the access transistor M122 are connected to the nodeND 122 and a bit line /BL. A connection point of the access transistorM122 and a bit line /BL forms a connection section ./B.

And gates of the access transistors M121, M122 are connected to the wordline WL through the connection section W.

In the RAM having such structure, since a write enable signal WRT EN isnon-active in low level in normal operation, the access transistors M121and M122 are in an off state, keeping outputting a memory value from theoutput terminal Q.

[Structure Example of Write Circuit of RAM]

Hereinafter, an explanation will be given on a write circuit of RAM.

The write circuit of RAM includes, as shown in FIG. 9, NMOS transistorsNT121, NT122, p-channel MOS (PMOS) transistors PT121, PT122, and 3-inputAND gates AD121, AD122.

A source of the NMOS transistor NT121 is grounded, a drain is connectedto one end side of the inverse bit line /BL. The drain of the PMOStransistor PT121 is connected to another end side of the inversion bitline /BL, and the source of the PMOS transistor PT121 is connected to asupplier line of a power source VDD.

A source of the NMOS transistor NT122 is grounded, a drain is connectedto one end side of the bit line BL. The drain of the PMOS transistorPT122 is connected to another end side of the bit line BL, and thesource of the PMOS transistor PT 122 is connected to a supplier line ofa power source VDD.

A gate of the NMOS transistor NT121 is connected to an output of ANDgate AD121. A gate of the NMOS transistor NT122 is connected to anoutput of AND gate AD122.

Moreover, gates of the PMOS transistors PT121 and PT122 are connected toa supplier line of an inverse signal /φ2 of a clock signal φ2.

The first input of 3-input AND gate AD121 is connected to a supplierline of DATA, which is a memory value data (0 or 1) to be written intoRAM. The second input of AND gate AD121 is connected to a supplier lineof the write enable signal WRT_EN, and the third input is connected to asupplier line of a clock signal φ1.

The first input which is a negative input of 3-input AND gate AD122 isconnected to a supplier line of DATA, which is a memory value data (0or 1) to be written into RAM. The second input of AND gate AD122 isconnected to a supplier line of the write enable signal WRT_EN, and thethird input is connected to a supplier line of a clock signal φ1.

FIG. 10(A) to (I) are timing charts for explaining operations of thepixel control section 120C in FIG. 8 and FIG. 9.

Here, a case where to access to the RAM121 will be explained. FIG. 10(A)indicates the write enable signal WRT_EN, FIG. 10(B) indicates the clocksignal φ1, FIG. 10(C) indicates the clock signal φ2, FIG. 10(D)indicates an electric potential of the bit line BL, and FIG. 10(E)indicates an electric potential of the inverse bit line /BL,respectively.

FIG. 10(F) indicates the transfer signal TX[2n] that is propagatedthrough a transfer control section LTX[2n], FIG. 10(G) indicates amemory value data DATA, FIG. 10(H) indicates a level of the node ND 121,and FIG. 10(I) indicates a level (output value) of the node ND 122,respectively.

On normal operation, the write enable signal WRT_EN is set to low level(logic 0), and the word line WLL11 becomes low level by AND gate 21.

As the result, since the access transistors M121, M122 of RAM 121 is ina state of off, RAM 121 keeps outputting a value stored in the node ND122 that is an interval loop from the output terminal Q.

When writing, the write enable signal WRT_EN is set to high level (logic1).

At first, the clock signal φ2 is set to high level for a predeterminedperiod, its inverse signal φ2 becomes low level and the PMOS transistorsPT121, PT122 turns on. This enables the bit line BL and the inverse bitline /BL are once precharged to high level (VDD level).the word lineWLL11 becomes low level by AND gate 21.

Next, synchronizing with the clock signal φ1, a high level of thetransfer signal TX[2n] is transferred to the transfer control lineLTX[2n] of a row preferable to be accessed, and the word line WLL11becomes high level by AND gate 21.

As the result, the access transistors M121, M122 of RAM 121 becomes astate of on.

At this time, depending on value of the memory value data DATA to bewritten, more specifically, depending on whether logic 0 or 1, eitherany of the NMOS transistors NT 121 or NT 122 turns on. This causes thebit line BL or the inverse bit line /BL, to which the transistor turnedon is connected, is to be discharged and to fall into low level.

Data level of the bit line BL or the inverse bit line /BL which hasfallen into low level is transmitted to the node ND122 or ND121 via theaccess transistors M122, M121, and its value will revise a value ofRAM121.

Here, as shown in FIG. 10(G), since the memory value data DATA is “1”,the NMOS transistor NT121 of a write circuit turns on, and the inversebit line /BL is to be discharged and to fall into low level.

Associating with this inverse bit line /BL that has fallen into lowlevel, the node ND121 is to be discharged through the inverse bit line/BL, the access transistor M121 of RAM 121, and the node ND121 becomeslow level. As the result, the node ND122 becomes high level, and data 1is to be written.

Synchronizing the clock signal φ1, the transfer signal TX[2n] becomeslow level, and the word line WLL11 becomes low level by AND gate 21.

As the result, the access transistors M121, M122 of the RAM121 turnsoff, writing is completed, and subsequently a precharge operation forwriting another row is continued.

According to the pixel control section 120C in FIG. 8 and FIG. 9,similar to the pixel control section 120B in FIG. 6, it is possible tochange into an arbitrary thinning mode, even in real-time, withoutchanging hardware.

Further, a kind of thinning mode is possible to be extended unlimitedlyin principle without changing a hardware depending upon series to bestored by DFF chain.

Taking advantage of a real time feature, it is possible to change athinning operation finely for various operations in a setting side.

Determine a requirement specification is turned to be not necessaryanymore primarily, and a level in which freedom in designing can beallowed would be advanced from hardware to software.

As the level allowing the freedom in designing advanced, a degree offreedom in determining specification is extended.

Especially, according to the pixel control section 120C in FIG. 8 andFIG. 9, since functions for specifying address is utilized as it is forwrite access to RAM in a V decoder, only small amount of hardware needsto be added.

The second structure example uses RAM, however, it should not be limitedto RAM in particular, but any storage device is satisfactory. Forexample, a latch, etc may be appropriate.

Moreover, there may be a case to store rows subject to be thinned, inreverse, there may be a case to store rows subject to be readout.

Specification of a storage device subject to perform storing operationis performed by an output signal of a circuit for specifying a row wherea readout operation or a reset operation is executed, or by a signalgenerated by an output from the circuit.

[Third Structure Example of Pixel Control Section]

FIG. 11 is a circuit diagram showing a third structure example of apixel control section of a vertical scan circuit according to theembodiment of the present invention.

In FIG. 11, a structure example in which a logic gate is arrangedbetween a readout row and unread row so that a reset state of an unreadpixel can be cancelled without a complex circuit structure when anaddress is selected or a selection signal becomes active in a primarypart of a circuit structure.

In other words, FIG. 11 shows a structure example of a shutter drive forpreventing blooming.

The pixel control section 120D in FIG. 11 includes NAND gates NA1, NA2,NOR gates NG1, NG2, OR gates OG20, OG21, and OR gates OG30, OR31.

The first input of NAND gate NA1 is connected to a reset control lineLRST [n] that is a supplier line of a reset signal RST[n], and thesecond input is connected to a selection control line LSEL[n] that is asupplier line of the selection signal SEL [n].

The first input of NAND gate NA2 is connected to a reset control lineLRST [n+1] that is a supplier line of a reset signal RST[n+1], and thesecond input is connected to a selection control line LSEL[n+1] that isa supplier line of the selection signal SEL[n+1].

The first input of NOR gates NG1 and NG2 are connected to a supplierline of the thinning signal SIG[m].

The second input of NOR gate NG1 is connected to a selection controlline LSEL[n] that is a supplier line of the selection signal SEL[n].

The second input of NOR gate NG2 is connected to a selection controlline LSEL[n+1] that is a supplier line of the selection signal SEL[n+1].

The first input of OR gate OG20 is connected to a transfer control lineLTX [2n+1] that is a supplier line of the transfer signal TX[2n+1], andthe second input is connected to an output of NOR gate NG1.

The first input of OR gate OG21 is connected to a transfer control lineLTX [2n] that is a supplier line of the transfer signal TX[2n], and thesecond input is grounded.

The first input of OR gate OG30 is connected to a transfer control lineLTX [2n+2] that is a supplier line of the transfer signal TX[2n+2], andthe second input is connected to an output of NOR gate NG2.

The first input of OR gate OG31 is connected to a transfer control lineLTX [2n+3] that is a supplier line of the transfer signal TX[2n+3], andthe second input is grounded.

FIG. 12 shows circuits and operation functions indicating in groups inMIL logic symbols related to FIG. 11.

Here, how to thin is prescribed in advance, and as shown in the figure,the most bottom row of TX′[2n] and the most upper row of TX′[2n+3] aredetermined as a row to be readout.

On the contrary, row of TX′[2n+1] and row of TX′[2n+2] are configured in2 pixels shared structure that shares between 2 pixels in the upperside, and between 2 pixels in the bottom side so that row of TX′[2n+1]and TX′[2n+2] becomes unread row.

Now, to indicate a logic circuit in MIL symbols, the most bottom readoutrow in the figure, 2n, is connected to OR gate OG21, and the most upperreadout row, TX[2n+3] is connected to OR gate OG31.

Row of TX[2n+1] and row of TX[2n+2], which are unread rows, areconnected to OR gates OG20 and OG30 respectively.

One side of input of OR gate OG21 is the transfer signal TX[2n], if theother input is grounded and when the transfer signal TX[2n] is highlevel “H(active)”, nothing would be happen and go through as it is sinceit is also grounded at “OR gate TG21”. For this reason, output TX′[2n]also becomes high level “H(active)” to be in a state of readout.

The transfer control line of this row is to be controlled normally.

In contrast, one side of input of OR gate OG20 is the transfer signal TX[2n+1], and the other input is supplied with an output V1 of the NORgate NG1.

And one side of input of the NOR gate NG1 is further connected to asupplier line of the thinning signal SIG[m], and forms a negative logicinput section together with the other side of the input section that isconnected to the selection control line LSEL[n].

The latter is further arranged between SEL[n] and TX[2n], forms one sideof the input section of NAND gate NA1 that has RST′[n] in an outputsection, and forms the negative logic input section together with theother side of input RST[n] of NAND gate NA1.

When the reset signal RST[n] is high level “H”, if the selection signalSEL[n] is set to high level “H”, the output reset signal RST′[n] becomeslow level “L”, and the reset fixing is cancelled.

At this time, the selection signal SEL[n] in high level “H” is inputinto one side of input of NOR gate NG1, and the thinning signal SIG[m]is input to the other side of input.

For this reason, when the thinning signal SIG[m] is high level “H”, theoutput V1 is low level “L”, and when the input TX[2n+1] of OR gate OG20is low level “L”, the output TX′[2n+1] becomes low level “L”.

In other words, row of TX′[2n+1] becomes in a state of unread.

Similarly, one side of input of OR gate OG31 is a transfer signalTX[2n+3], if the other side of input is grounded, when the transfersignal [2n+3] is always high level “H(active)”, output TX′[2n+3] becomeshigh level “H” and in a state of readout.

In contrast, one side of input of OR gate OG30 is the transfer signal TX[2n+2], and the other input is supplied with an output V2 of the NORgate NG2.

One side of input of the NOR gate NG2 is supplied with the thinningsignal SIG[m], and forms a negative logic input section together withthe other side of the input section that is connected to the selectioncontrol line LSEL[n+1].

The latter further forms one side of input section of NAND gate NA2arranged between itself and the reset control line LRST′[n+1], and formsthe negative logic input section together with the other side of inputRST[n+1] of NAND gate NA2.

When the reset signal RST[n+1] is high level “H”, if the selectionsignal SEL[n+1] is set to be high level “H”, the output reset signalRST′[n+1] becomes low level “L”, and reset fixing is cancelled.

At this time, since the selection signal SEL[n+1] in high level “H” isinput into one side of input of NOR gate NG2, and the thinning signalSIG[m] is input to the other side of input, therefore, if the signal ishigh level “H”, the output V2 becomes low level “L”.

When the input TX[2n+2] of OR gate OG30 is low level “L”, the outputTX′[2n+2] becomes low level “L”.

Therefore, row of TX′[2n+2] becomes in a state of unread.

Note that in the embodiment of the present invention, a combinationlogic circuit to constitute a logic gate is OR circuit, NOR circuit, andHAND circuit, however, if it is a circuit that realizes the operationdescribed above, it is not necessarily limited to them.

FIG. 13(A) to (G) is a diagram showing a timing chart of a circuit inFIG. 11.

FIG. 13(A) to (G) illustrates timing charts about a pair of a readoutrow and an unread row in the lower part of FIG. 2.

FIG. 13(A) illustrates the selection signal SEL[n], FIG. 13(B)illustrates the reset signal RST[n], FIG. 13(C) illustrates a transfersignal TX[2n], and FIG. 13 illustrates the transfer signal TX[2n+1]respectively.

Regarding the row of TX[2n], since one side of the input section of ORgate OG21 is grounded, the input signal on left side goes through as itis to the right side to become the transfer signal TX′[2n].

During the period while the selection signal SEL[n] is high level “H”,high level “H” is cancelled from the reset signal RST[n], row of TX′[2n]becomes high level “H”, and a readout row.

On the contrary, a reset fixing is also cancelled from the row ofTX′[2n+1], becomes low level “L” during this period, and row ofTX′[2n+1] is fixed to low level “L” in an unread state.

Next, a structure example of driving the blooming suppressing shutter ina case of four pixels shared.

FIG. 14 is a diagram showing a structure example of four pixels shared.

In FIG. 14, for easier understanding, structure parts same as FIG. 5 isshown in the same reference signs.

FIG. 15 is a diagram showing an example of pixel arrangement in case offour pixels shared.

In the example of FIG. 15, four pixels are shared so that pixel a andpixel d are repeated in zigzag manner in column direction, and pixel band pixel c are repeated in the next column in column direction, sharingfour pixels respectively in longitudinal direction.

Each unit of sharing is overlapped in horizontal direction, one unit ofsharing is in horizontal direction, and the selection control lineLSEL[n], the reset control line LRST[n] are shared.

It shows a state where four of the transfer control line TX′[4n],TX′[4n+1], TX′[4n+2], TX′[4n+3] are arranged corresponding to eachrespective pixel in a unit.

[Fourth Structure Example of Four Pixels Shared]

FIG. 16 is a circuit diagram showing a fourth structure example of apixel control unit of a vertical scan circuit according to theembodiment of the present invention.

FIG. 16 shows how logic gate composed of a plurality of logic circuitsis applied for executing “read” and “unread” with respect to each of theplurality of transfer lines in response to supplying four pixels.

The pixel control section 120E in FIG. 16 includes a NAND gate NA3, aNOR gate NG11, NG12, OR gate OG40, OG41, and OR gates OG40, OR51

The first input of NAND gate NA3 is connected to a reset control lineLRST [n] that is a supplier line of a reset signal RST[n], and thesecond input is connected to a selection control line LSEL[n] that is asupplier line of the selection signal SEL [n].

The first input of NOR gates NG1 and NG12 are connected to a supplierline of the thinning signal SIG[m′].

The second input of NOR gate NG11 and NG12 is connected to a selectioncontrol line LSEL[n] that is a supplier line of the selection signalSEL[n].

The first input of OR gate OG40 is connected to a transfer control lineLTX [4n+1] that is a supplier line of the transfer signal TX[4n+1], andthe second input is connected to an output of NOR gate NG11.

The first input of OR gate OG41 is connected to a transfer control lineLTX [4n] that is a supplier line of the transfer signal TX[4n], and thesecond input is grounded.

The first input of OR gate OG50 is connected to a transfer control lineLTX [4n+2] that is a supplier line of the transfer signal TX[4n+2], andthe second input is connected to an output of NOR gate NG12.

The first input of OR gate OG51 is connected to a transfer control lineLTX[4n+3] that is a supplier line of the transfer signal TX[4n+3], andthe second input is grounded. In the structure of FIG. 16, the transfercontrol lines LTX[4n] and LTX[4n+3], which are readout rows, areconnected to OR gates OG41 and OG51 respectively, and one side of inputsection of each of OR gates OG41 and OG51 is formed.

In this case, the other sides of input section of OR gates OG41, andOR51 are both grounded.

Now, when the transfer signal TX[4n] is high level “H”, since the otherside of input of OR gate OG41 is grounded, the output becomes high level“H” and the row of TX′[4n] becomes in a read out state

Similarly, when the transfer signal TX[4n+3] is high level “H”, sincethe other side of input of OR gate OG51 is grounded, the output becomeshigh level “H” and the row of TX′[4n+3] becomes in a readout state.

On the contrary, the transfer control line LTX[4n+1] and LTX[4n+2],which are unread rows, are also arranged with the OR gates OG40 and OG50respectively, and one side of input section of the OR gates OG40, OG50are formed.

The other side of input section of the OR gates OG40, OG50 is suppliedwith outputs V1′ and V2′ of the NOR gate NG11 and the NOR gate NG12respectively.

One side of the input section of the NOR gate NG11 and NOR gate NG12 issupplied with a thinning signal SIG[m′], and the other sides of theinput sections are connected together to the selection control lineSEL[n].

NAND gate NA3 is arranged between the selection control line SEL[n] andthe reset control line RST[n], so as to treat each of them as an inputsection whose output is RST′[n].

Regarding other two of pixels having a shared relationship with thereadout pixel, in order to cancel high level of reset fixing to turninto an unread state, the reset signal RST[n] and the selection signalSEL[n] are both need to be high level “H”, and the output RST′[n] isneed to be low level “L”.

At this time, if the thinning singal SIG[m′] is set to high level “H”,outputs V1′ and V2′ of NOR gate NG11 and NOR gate NG12 become low level“L”.

When the transfer signal TX[4n+1] AND TX[4n+2] are low level “L”,outputs of OR gates OG40 and OG50 become low level “L”, therefore, eachrow of TX′[4n+1] and TX′[4n+2] becomes in a unread state.

FIG. 17 shows circuits and operation functions indicating in groups inMIL logic symbols related to FIG. 16.

If the pixel control section described above connects A1 or A2 to apredetermined connection section at the time of layout so that G1 and G2falls into GND respectively, the following two effect can be expected.

It is expected that logic gates of same combination are inserted to allrows.

This makes production process very simple since only sorting contacts isneeded. Gates to be align are completely the same for all rows, andsorting should be done only whether to connect to GND or to a gate, liketo read only contact/not to read/not to read/to read . . . .

It is possible to respond to a change of an interval of thinning, anddesigning circuits will be easy.

Precise timing control, such as for outputting shared pixels at thisparticular timing while waiting for the timing, will be completelyunnecessary.

It can be applied for reading thinning of various pixel sharedstructure, not only 2 pixels shared but also 4 pixels shared.

It becomes easy to switch between reading all pixels and readingthinning, and they can be done easily.

As described above, the present embodiment can arrange a logic gatecomposed of a plurality of logic circuits combination on a transfer lineof pixel shared structure.

An unread pixel is normally to be fixed to a reset state, and whenreading a readout pixel in a shared relationship, and if its address isselected or if a selection signal becomes active, the logic gate cancelsthe reset state of the unread pixels to turn into an unread state.

Further, the above logic gate configuring a logic circuit that cancelsthe reset state of unread pixels is repeated in a cycle same with acycle of shared pixels, and it is possible to change control of readoutpixels and unread pixels only by connection relationship of its logicgate.

Therefore, according to the present embodiment, it is possible to obtainthe following effectiveness.

Driving ability of a control line selection driver can be reduced onlyat a time of a global shutter.

This can reduce a peak current at a time of PD reset of the globalshutter, in parallel with switching the reset signal RST and thetransfer signal TX at sufficient speed at a time of rolling shutter anddata read.

As the result, devices can be prevented from being broken caused byquality deterioration or latch-up.

Moreover, according to the structure of FIG. 16, it is possible tonarrow an area for driver to reduce costs.

Note that CMOS image sensors according to each embodiment are notlimited to in particular, but can be configured as CMOS image sensorsmounted with a column-parallel type analog-digital converter(hereinafter, referred to as ADC (Analog Digital Converter)), forexample.

2. Second Embodiment

FIG. 18 is a block diagram showing an example of a solid-state imagepickup device mounted with a column-parallel ADC (a CMOS image sensor)according to the second embodiment of the present invention.

This solid-state image pickup device 200 includes, as shown in FIG. 18,a pixel array unit 210 as an imaging section, a vertical scan circuit220 as a pixel driving section, a horizontal transfer scan circuit 230,and a timing control circuit 240.

Further, the solid-state image pickup device 200 includes an ADG group250, a digital-analog converter (hereinafter, referred to as DAC(Digital Analog Converter)) 260, an amplifier circuit (S/A) 270, and asignal processing circuit 280.

The pixel array section 210 is configured by being arranged with pixels,as shown in FIG. 4, for example, including a photodiode and an in-pixelamplifier, in matrix (row-column)

Moreover, the solid-state image pickup device is equipped with thefollowing circuits as a control circuit for sequentially reading signalsof a pixel array section 210.

That is, the solid-state image pickup device 200 is equipped with atiming control circuit that generates inner clock as a control circuit,a vertical scan circuit 220 that controls row address and row scanning,and a horizontal transfer scan circuit 230 that controls column addressand column scanning.

In addition, the vertical scan circuit 220 is applied with the verticalscan circuit that has been explained in association with theabove-described FIG. 4 to FIG. 17.

The ADG group 250 is arranged with ADC, having a comparator 251, acounter 252, and a latch 253, in a plurality of columns.

The comparator 251 compares a reference voltage Vslop, a ramp waveform(RAMP) which has been changed in a staircase pattern from a referencevoltage generated by the DAC260, and an analog signal obtained from apixel for each of a row line via a vertical signal line.

The counter 252 counts comparison time of the comparator 251.

The ADC group 250 has a feature of n-bit digital signal conversion, isarranged for each of the vertical signal line (column line), andconfigures a column-parallel ADC block.

Output of each of the latch 253 is connected to the horizontal transferline 290 with 2n-bit width, for example.

Then 2n pieces of an amplifier circuit 270 that support the horizontaltransfer line 290, and a signal processing circuit 280.

In the ADC group 250, an analog signal (electric potential Vsl) that hasbeen readout by the vertical signal line is compared with the referencevoltage Vslop (a slope waveform to be changed in linear with some slope)in the comparator 251 arranged for each column.

At this time, the counter 252 arranged for each column same as thecomparator 251 is operating and converts the electric potential of thevertical signal line (analog signal) Vsl into a digital signal, whilethe electric potential Vslop with RAMP and counter values support eachother by each pair to change.

The change of the reference voltage Vslop is a conversion from a changein voltage to a change in time, and converts the time into a digitalsignal by counting the time I some cycle (clock).

When the analog electrical signal Vsl and the reference voltage Vslopintersect, an output of the comparator 251 inverts, an input clock ofthe counter 252 is stopped, and the AD conversion is completed.

After above period of AD conversion, the horizontal transfer scancircuit 230 inputs data contained by the latch 253 into the signalprocessing circuit 280 via the horizontal transfer line 290 and anamplifier circuit 270, and generates 2D images

In such manner, a column-parallel output processing is performed.

The solid-state image pickup device having such advantages can beapplied to a digital camera or a video camera, as an imaging device.

3. Third Embodiment

FIG. 19 is a diagram showing a configuration example of a camera systemto which the solid-state image pickup device is applied according to thethird embodiment of the present invention.

The camera system 300 includes, as illustrated in FIG. 19, the imagingdevice 310 that a CMOS image sensor (solid-state image pickup device)100 and 200 according to the present embodiment can be applied.

Further, the camera system 300 includes an optical system that leadsincident light (forms an image of a subject) into a pixel region of theimaging device 310, for example, a lens 320 that makes an incident light(image light) to form an image on imaging surface.

The camera system 300 includes a driving circuit (DRV) 330 that drivesthe imaging device 310, a signal processing circuit (PRC) 340 thatprocesses output signals of the imaging device 310.

The driving circuit 330 includes a timing generator (not shown) thatgenerates various timing signals including start pulse and clock pulsewhich drive circuits within the imaging device 310, and drives theimaging device 310 using a predetermined timing signals.

Further, a signal processing circuit 340 executes a predetermined signalprocessing to output signals of the imaging device 310.

Image signals processed in the signal processing circuit 340 arerecorded in a storage medium, such as a memory, or the like. Imageinformation recorded in the storage medium is to take hard copy using aprinter, or the like. Moreover, the image signals processed in thesignal processing circuit 340 is to be displayed on a monitor composedof a liquid crystal display or the like as a video.

As described above, in an imaging apparatus such as a digital stillcamera, a camera with low power consumption and high accuracy can berealized by mounting the above-mentioned imaging devices 100 and 200 asthe imaging device 310.

What is claimed:
 1. A solid-state image pickup device comprising: apixel section configured with a plurality of pixels, each pixel havingat least one photoelectric conversion element; and a pixel drivingsection configured to control the plurality of pixels; wherein, two ormore pixels share at least one transistor element, and the pixel drivingsection is configured to set a reset state on at least one pixel, andwhen reading an electrical charge from other pixel which shares thetransistor element.
 2. The solid-state image pickup device according toclaim 1, wherein each of the pixels has a floating diffusion to storeelectrical charge from the photoelectric conversion element.
 3. Thesolid-state image pickup device according to claim 1, wherein each ofthe pixels has at least one transistor element.
 4. The solid-state imagepickup device according to claim 3, wherein the transistor element is atransfer transistor to read the electrical charge from the photoelectricconversion element.
 5. The solid-state image pickup device according toclaim 3, wherein the transistor element is an amplifying transistor toconvert the electrical charge from the photoelectric conversion elementto an image signal.
 6. The solid-state image pickup device according toclaim 3, wherein the transistor element is a reset transistor to set thereset state on each of the pixels.
 7. The solid-state image pickupdevice according to claim 5, wherein the transistor element is a selecttransistor to read the image signal from the amplifying transistor to avertical signal line.
 8. The solid-state image pickup device accordingto claim 3, wherein the pixel control section is configured to connectto a gate of the transistor element.
 9. A camera system comprising: asolid-state image pickup device; an optical system for forming an imageof a subject on the image pickup device; and a signal processing circuitfor processing an output image signal of the image pickup device,wherein, the solid-state image pickup device includes (a) a pixelsection configured with a plurality of pixels, each pixel having atleast one photoelectric conversion element, and (b) a pixel drivingsection configured to control the plurality of pixels, two or morepixels share at least one transistor element, and the pixel drivingsection is configured to set a reset state on at least one pixel, andwhen reading an electrical charge from other pixel which shares thetransistor element.
 10. The camera system according to claim 9, whereineach of the pixels has a floating diffusion to store the electricalcharge from the photoelectric conversion element.
 11. The camera systemaccording to claim 9, wherein each of the pixels has at least onetransistor element.
 12. The camera system according to claim 11, whereinthe transistor element is a transfer transistor to read the electricalcharge from the photoelectric conversion element.
 13. The camera systemaccording to claim 11, wherein the transistor element is an amplifyingtransistor to convert the electrical charge from the photoelectricconversion element to an image signal.
 14. The camera system accordingto claim 11, wherein the transistor element is a reset transistor to setthe reset state on each of the pixels.
 15. The camera system accordingto claim 13, wherein the transistor element is a select transistor toread the image signal from the amplifying transistor to a verticalsignal line.
 16. The camera system according to claim 11, wherein thepixel control section configured to connect to a gate of the transistorelement.